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CREE預警雷達的優越

推送周期：2020-12-04 17:15:33 手機瀏覽：1929

CREE公司的GaN HEMT和LDMOS器件非常適合脈沖和連續波應用。從寬帶GaN到SiC晶體管到GaN到SiC MMIC功率放大器，CREE支持L、s、C、X和Ku波段的應用，并提供業界最小、最輕、最高效和最高性能的解決方案，其可靠性超過數十億小時。

CREE的產品設備組合名字為在28 V、40 V和50 V下工作任務的CW非常廣泛應用中的脈沖發生器帶來了非常廣泛的極有效率結晶體管和調大器。CREE GaN到SiC HEMT有行業內技術型的額定功率高密度、更為重要些的穿透端電壓、更為重要些的傳熱性和有效的關鍵，一同消費減少的能量是什么。

武漢市立維創展新材料技術是CREE的供應商商，CREE工司產品設備具有：LED處理芯片、照明電器LED、背光LED、供電旋轉開關系統設計、rf射頻設配用LED和wifi電設備。中鐵二院仰仗其適宜的現貨供應校園推廣渠道，具備長期性的的銷量以考慮中市場中的需要量。歡迎語咨詢了解。。

CREE雷達的優勢

SKU	Technology	Frequency (Min)	Frequency (Max)	Peak Output Power	Gain	Efficiency	Operating Voltage
CMPA3135060S	GaN on SiC	3.1 GHz	3.5 GHz	75 W	29 dB	0.55	50 V
CGH55015F2	GaN on SiC	DC	6 GHz	10 W	12 dB	0.6	28 V
CGH55015F2-AMP	GaN on SiC	5.4 GHz	5.9 GHz	10 W	12 dB	NA	28 V
CGH55015P2	GaN on SiC	DC	6 GHz	10 W	12 dB	0.6	28 V
PTVA030121EA-V1	LDMOS	0.39 GHz	0.45 GHz	12 W	25 dB	0.69	50 V
CGHV27015S	GaN on SiC	DC	6 GHz	15 W	21 dB	0.32	50 V
CMPA2735015D	GaN on SiC	2.7 GHz	3.5 GHz	15 W	32 dB	0.45	50 V
CMPA2735015S	GaN on SiC	2.7 GHz	3.5 GHz	15 W	33 dB	0.5	50 V
CMPA901A020S	GaN on SiC	9 GHz	10 GHz	20 W	35 dB	0.45	28 V
CGH55030F2	GaN on SiC	DC	6 GHz	25 W	12 dB	0.6	28 V
CGH55030F2-AMP	GaN on SiC	5.4 GHz	5.9 GHz	25 W	12 dB	NA	28 V
CGH55030P2	GaN on SiC	DC	6 GHz	25 W	12 dB	0.6	28 V
CMPA801B025D	GaN on SiC	8 GHz	11 GHz	25 W	28 dB	0.45	28 V
CMPA801B025F	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	0.36	28 V
CMPA801B025F-AMP	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	NA	28 V
CMPA801B025P	GaN on SiC	8 GHz	11 GHz	25 W	16 dB	0.36	28 V
PTVA120251EA-V2	LDMOS	0.5 GHz	1.4 GHz	25 W	18 dB	0.54	50 V
CMPA2735030S	GaN on SiC	2.7 GHz	3.5 GHz	30 W	32 dB	0.45	50 V
CMPA9396025S	GaN on SiC	9 GHz	10 GHz	35 W	27 dB	0.45	40 V
CMPA2735030D	GaN on SiC	2.7 GHz	3.5 GHz	30 W	30 dB	0.45	50 V
CMPA801B030D	GaN on SiC	8 GHz	11 GHz	30 W	28 dB	0.42	28 V
CMPA801B030F	GaN on SiC	8 GHz	11 GHz	30 W	16 dB	0.36	28 V
CMPA801B030F-AMP	GaN on SiC	8 GHz	11 GHz	30 W	16 dB	NA	28 V
CMPA5259025F	GaN on SiC	5.2 GHz	5.9 GHz	37 W	32 dB	0.5	28 V
CMPA5259025F-AMP	GaN on SiC	5.2 GHz	5.9 GHz	37 W	32 dB	NA	28 V
CMPA801B030S	GaN on SiC	7.9 GHz	11 GHz	40 W	27 dB	0.4	28 V
CMPA901A035F	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	0.35	28 V
CMPA901A035F-AMP	GaN on SiC	9 GHz	10 GHz	40 W	34 dB	NA	28 V
CGHV96050F2	GaN on SiC	7.9 GHz	9.6 GHz	50 W	10 dB	0.55	40 V
CGHV96050F2-AMP	GaN on SiC	8.4 GHz	9.6 GHz	50 W	10 dB	NA	40 V
CMPA5259050F	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	0.54	28 V
CMPA5259050F-AMP	GaN on SiC	5.2 GHz	5.9 GHz	50 W	30 dB	NA	28 V
PTVA120501EA-V1	LDMOS	1.2 GHz	1.4 GHz	50 W	17 dB	0.5	50 V
CGH35060F2	GaN on SiC	3.1 GHz	3.5 GHz	60 W	12 dB	0.6	28 V
CGH35060P2	GaN on SiC	3.1 GHz	3.5 GHz	60 W	12 dB	0.6	28 V
CMPA2738060F	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	0.54	50 V
CMPA2738060F-AMP	GaN on SiC	2.7 GHz	3.8 GHz	80 W	34 dB	NA	50 V
CGHV59070F	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	0.5	50 V
CGHV59070F-AMP	GaN on SiC	4.8 GHz	5.9 GHz	70 W	12 dB	NA	50 V
CGHV59070P	GaN on SiC	4.5 GHz	5.9 GHz	70 W	12 dB	0.5	50 V
CMPA2735075D	GaN on SiC	2.7 GHz	3.5 GHz	75 W	28 dB	0.61	28 V
CMPA2735075F	GaN on SiC	2.7 GHz	3.5 GHz	75 W	27 dB	0.54	28 V
CGHV96100F2	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	0.45	40 V
CGHV96100F2-AMP	GaN on SiC	7.9 GHz	9.6 GHz	100 W	10 dB	NA	40 V
CGHV35120F	GaN on SiC	3.1 GHz	3.5 GHz	120 W	>7 dB	0.62	50 V
CGHV96130F	GaN on SiC	8.4 GHz	9.6 GHz	130 W	7.5 dB	0.42	40 V
CGHV35150F	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	0.5	50 V
CGHV35150F-AMP	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	NA
CGHV35150P	GaN on SiC	2.9 GHz	3.5 GHz	150 W	13.5 dB	0.5
CMPA2935150S	GaN on SiC	2.9 GHz	3.5 GHz	150 W
GTVA311801FA-V1	GaN on SiC	2.7 GHz	3.1 GHz	180 W	15 dB	0.7	50 V
LTN/GTVA311801FA-V1	GaN on SiC	2.7 GHz	3.1 GHz	180 W	15 dB	0.7	50 V
PTVA102001EA-V1	LDMOS	0.96 GHz	1.6 GHz	200 W	18.5 dB	0.6	50 V
CGH31240F	GaN on SiC	2.7 GHz	3.1 GHz	240 W	12 dB	0.6	28 V
CGH35240F	GaN on SiC	3.1 GHz	3.5 GHz	240 W	11.6 dB	0.57	28 V
CGHV14250F	GaN on SiC	1.2 GHz	1.4 GHz	250 W	18 dB	0.77	50 V
CGHV14250F-AMP	GaN on SiC	1.2 GHz	1.4 GHz	250 W	18 dB	NA
CGHV14250P	GaN on SiC	1.2 GHz	1.4 GHz	250 W	18 dB	0.77
CGHV59350F	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	0.55	50 V
CGHV59350F-AMP	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	NA	50 V
CGHV59350P	GaN on SiC	5.2 GHz	5.9 GHz	350 W	11 dB	0.55	50 V
GTVA123501FA-V1	GaN on SiC	1.2 GHz	1.4 GHz	350 W	18 dB	0.71	50 V
PTVA123501EC-V2	LDMOS	1.2 GHz	1.4 GHz	350 W	17 dB	0.55	50 V
PTVA123501FC-V1	LDMOS	1.2 GHz	1.4 GHz	350 W	17 dB	0.55	50 V
CGHV35400F	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	0.6	50 V
CGHV35400F-AMP	GaN on SiC	2.9 GHz	3.5 GHz	400 W	11 dB	NA	50 V
GTVA104001FA-V1	GaN on SiC	0.96 GHz	1.215 GHz	400 W	19 dB	0.7	50 V
PTVA104501EH-V1	LDMOS	0.96 GHz	1.215 GHz	450 W	17.5 dB	0.58	50 V
PTVA035002EV-V1	LDMOS	0.39 GHz	0.45 GHz	450 W	18 dB	0.64	50 V
CGHV14500F	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	0.68	50 V
CGHV14500F-AMP	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	NA
CGHV14500P	GaN on SiC	1.2 GHz	1.4 GHz	500 W	16 dB	0.68
CGHV31500F	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	0.6	50 V
CGHV31500F-AMP	GaN on SiC	2.7 GHz	3.1 GHz	500 W	12.75 dB	NA
GTVA355001	GaN on SiC	2.9 GHz	3.5 GHz	500 W	>7 dB	0.65	50 V
GTVA355001EC	GaN on SiC	2.9 GHz	3.5 GHz	500 W	>7 dB	0.65	50 V
LTN/GTVA355001EC-V1	GaN on SiC	2.9 GHz	3.5 GHz	500 W	>7 dB	0.65	50 V
CGHV37400F	GaN on SiC	3.3 GHz	3.7 GHz	550 W	14 dB	0.55	48 V
GTVA126001EC-V1	GaN on SiC	1.2 GHz	1.4 GHz	600 W	20 dB	0.63	50 V
GTVA126001FC-V1	GaN on SiC	1.2 GHz	1.4 GHz	600 W	20 dB	0.63	50 V
GTVA107001EC-V1	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	0.7	50 V
GTVA107001EFC-V1	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	0.7	50 V
GTVA107001FC-V1	GaN on SiC	0.96 GHz	1.215 GHz	700 W	20 dB	0.7	50 V
PTVA047002EV-V1	LDMOS	0.47 GHz	0.806 GHz	700 W	17.5 dB	0.29	50 V
PTVA127002EV-V1	LDMOS	1.2 GHz	1.4 GHz	700 W	16 dB	0.56	50 V
CGHV14800F	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	0.65	50 V
CGHV14800F-AMP	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	NA
CGHV14800P	GaN on SiC	1.2 GHz	1.4 GHz	800 W	16 dB	0.65
PTVA101K02EV-V1	LDMOS	1.03 GHz	1.09 GHz	900 W	18 dB	0.65	50 V
GTVA101K42EV-V1	GaN on SiC	0.96 GHz	1.215 GHz	1400 W	17 dB	0.68	50 V
LTN/GTVA101K42EV-V1	GaN on SiC	0.96 GHz	1.215 GHz	1400 W	17 dB	0.68	50 V

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